參數(shù)資料
型號(hào): 2N7370
廠商: MICROSEMI CORP
元件分類: 功率晶體管
英文描述: NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
中文描述: 12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 62K
代理商: 2N7370
2N7370 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 6.0 Adc, V
CE
= 3.0 Vdc
I
C
= 12 Adc, V
CE
= 3.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 12 Adc, I
B
= 120 mAdc
Base-Emitter Saturation Voltage
I
C
= 12 Adc, I
B
= 120 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 12 Adc; I
B1
= 120 mAdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 12 Adc; I
B1
=
I
B2
= 120 mAdc
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t
1.0 s
Test 1
V
CE
= 8.3 Vdc, I
C
= 12 Adc
Test 2
V
CE
= 30 Vdc, I
C
= 3.3 Adc
Test 3
V
CE
= 90 Vdc, I
C
= 150 mAdc
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%.
h
FE
1,000
150
18,000
V
CE(sat)
V
BE(sat)
3.0
4.0
Vdc
Vdc
h
fe
10
250
t
on
t
off
2.0
10
μ
s
μ
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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