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參數(shù)資料
| 型號： | 2PB709ARL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 45 V, 100 mA PNP general-purpose transistors |
| 中文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 56K |
| 代理商： | 2PB709ARL |
2PB709AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
3 of 9
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
I
CM
peak collector current
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
45
45
6
100
200
Unit
V
V
V
mA
mA
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°
C
I
BM
peak base current
-
100
mA
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
-
250
150
+150
+150
mW
°
C
°
C
°
C
-
55
65
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min
Typ
-
Max
500
Unit
K/W
[1]
-
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
Characteristics
Conditions
V
CB
=
45 V; I
E
= 0 A
V
CB
=
45 V; I
E
= 0 A;
T
j
= 150
°
C
V
EB
=
5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
10
5
Unit
nA
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
h
FE
group R
h
FE
group S
collector-emitter
saturation voltage
-
-
10
nA
h
FE
V
CE
=
10 V; I
C
=
2 mA
210
290
-
-
-
340
460
500
V
CEsat
I
C
=
100 mA;
I
B
=
10 mA
[1]
-
mV
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2PB709ARL,215 | 功能描述:兩極晶體管 - BJT 45V 100MA PNP GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2PB709ARL,235 | 功能描述:兩極晶體管 - BJT Trans GP BJT PNP 45V 0.1A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2PB709ARL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:45 V, 100 mA PNP general-purpose transistors |
| 2PB709ARL215 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| 2PB709ART | 制造商:NXP Semiconductors 功能描述:TRANS, PNP, 45V, 100MA, SOT23 制造商:NXP Semiconductors 功能描述:TRANS, PNP, 45V, 100MA, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ ft:70MHz; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:210; No. of Pins:3 ;RoHS Compliant: Yes |
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