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參數(shù)資料
| 型號(hào)： | 2PB710ASL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 V, 500 mA PNP general-purpose transistors |
| 中文描述： | SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2PB710ASL |
2PB710AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 October 2008
3 of 9
NXP Semiconductors
2PB710ARL; 2PB710ASL
50 V, 500 mA PNP general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
I
CM
peak collector current
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
60
50
5
500
1
Unit
V
V
V
mA
A
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°
C
I
BM
peak base current
-
200
mA
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
-
250
150
+150
+150
mW
°
C
°
C
°
C
-
55
65
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min
Typ
-
Max
500
Unit
K/W
[1]
-
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
Characteristics
Conditions
V
CB
=
60 V; I
E
= 0 A
V
CB
=
60 V; I
E
= 0 A;
T
j
= 150
°
C
Min
-
-
Typ
-
-
Max
10
5
Unit
nA
μ
A
I
EBO
h
FE
emitter-base cut-off current V
EB
=
5 V; I
C
= 0 A
DC current gain
-
-
-
10
-
nA
V
CE
=
10 V;
I
C
=
500 mA
V
CE
=
10 V;
I
C
=
150 mA
V
CE
=
10 V;
I
C
=
150 mA
I
C
=
300 mA;
I
B
=
30 mA
[1]
40
h
FE
group R
[1]
120
-
240
h
FE
group S
[1]
170
-
340
V
CEsat
collector-emitter saturation
voltage
[1]
-
-
600
mV
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|---|---|
| 2PB710ASL,215 | 功能描述:兩極晶體管 - BJT 50V 500MA PNP GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2PB710ASL,235 | 功能描述:兩極晶體管 - BJT Trans GP BJT PNP 50V 0.5A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2PB710ASL/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:50 V, 500 mA PNP general-purpose transistors |
| 2PB710ASL/ZLR | 功能描述:TRANS PNP GEN PURP SOT346 制造商:nxp usa inc. 系列:* 零件狀態(tài):停產(chǎn) 標(biāo)準(zhǔn)包裝:3,000 |
| 2PB710AST/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236VAR |
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