參數(shù)資料
型號： 2PC4617RM
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： NPN general purpose transistors
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 202K
代理商： 2PC4617RM
2003 Jul 15
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
2PC4617M series
FEATURES
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
Board space 1.3
×
0.9 mm
Power dissipation comparable to SOT23.
APPLICATIONS
General purpose small signal DC applications
Low and medium frequency AC applications
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
NPN general purpose transistor in a SOT883 leadless ultra
small plastic package.
PNP complement: 2PA1776M series.
MARKING
TYPE NUMBER
MARKING CODE
2PC4617QM
2PC4617RM
2PC4617SM
D7
D8
D9
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
handbook, halfpage
MAM475
1
2
3
1
3
Bottom view
Fig.1 Simplified outline (SOT883) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
I
C
I
CM
collector-emitter voltage
collector current (DC)
peak collector current
50
100
200
V
mA
mA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Notes
1.
2.
Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
50
50
5
100
200
200
V
V
V
mA
mA
mA
T
amb
≤
25
°
C
note 1
note 2
65
65
250
430
+150
150
+150
mW
mW
°
C
°
C
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2PC4617RM T/R 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PC4617RM,315 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PC4617RMB 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN50V 0.1A SOT88 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN,50V 0.1A, SOT883B 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN,50V 0.1A, SOT883B; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:180; Operating Temperature Min:-55C; Operating ;RoHS Compliant: Yes
2PC4617RMB,315 功能描述:兩極晶體管 - BJT 51 V mA NPN General Purpose Tran RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PC4617S 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN general purpose transistor
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