參數(shù)資料
型號(hào): 2PD1820AQ-T
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-70, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 101K
代理商: 2PD1820AQ-T
1999 Apr 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistor
2PD1820A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
General purpose switching and amplification, especially
for portable equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
2PD1820AQ
A
Q
2PD1820AR
A
R
2PD1820AS
A
S
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
MAM336
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
500
mA
ICM
peak collector current
1
A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2PD1820AR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN general purpose transistor
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2PD1820AR,115 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PD1820AS 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN General Purpose Transistor
2PD1820AS T/R 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2