參數(shù)資料
型號: 2PD602AQL/DG
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/9頁
文件大小: 57K
代理商: 2PD602AQL/DG
2PD602AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 27 October 2008
3 of 9
NXP Semiconductors
2PD602AxL
50 V, 500 mA NPN general-purpose transistors
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2PD602AQL/DG
SX*
2PD602ARL/DG
SW*
2PD602ASL/DG
SV*
Table 5.
Marking codes …continued
Type number
Marking code[1]
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
500
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-1
A
IBM
peak base current
single pulse;
tp ≤ 1ms
-
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
55
+150
°C
Tstg
storage temperature
65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
-
500
K/W
相關(guān)PDF資料
PDF描述
2PG001 30 A, 300 V, N-CHANNEL IGBT, TO-220AB
2PG003 40 A, 430 V, N-CHANNEL IGBT, TO-220AB
2S033R1 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2S103G4 50 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
2S302A 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2PD602AR 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN general purpose transistor
2PD602AR T/R 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PD602AR,115 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2PD602ARL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:50 V, 500 mA NPN general-purpose transistors
2PD602ARL,215 功能描述:兩極晶體管 - BJT 50V 500MA NPN GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2