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參數(shù)資料
| 型號： | 2PG402 |
| 廠商： | PANASONIC CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 5 A, 400 V, N-CHANNEL IGBT |
| 封裝： | U-TYPE PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2PG402 |
1
IGBTs
2PG402
Insulated Gate Bipolar Transistor
unit: mm
I
Features
G
High breakdown voltage: V
CES
= 400V
G
Allowing to control large current: I
C(peak)
= 130A
G
Housed in the surface mounting package
I
Applications
G
For flash-light for use in a camera
1: Emitter
2: Collector
3: Gate
U Type Package
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
ch
T
stg
Ratings
400
±8
5
130
10
1
150
55 to +150
Unit
V
V
A
A
W
°C
°C
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
CE
= 320V, V
GE
= 0
V
GE
= ±8V, V
CE
= 0
I
C
= 1mA, V
GE
= 0
V
CE
= 10V, I
C
= 1mA
V
GE
= 5V, I
C
= 5A
V
GE
= 5V, I
C
= 130A
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V, I
C
= 130A
V
GE
= 5V, R
g
= 25
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
μ
A
μ
A
V
V
V
pF
ns
μ
s
ns
μ
s
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
3.0
±
0.1
0.85
±
0.1
4.6
±
0.1
1
0.75
±
0.1
0.5
±
0.1
9
±
0
1
±
0
7
±
0
5
±
0
0
2
±
0
2
±
0
2
±
0
Marking
2
±
0
0.05 to 0.15
1.0
±
0.1
2
3
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