參數(shù)資料
型號(hào): 2SA1015-O
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號(hào)晶體管
英文描述: PNP Silicon Plastic-Encapsulate Transistor
中文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大?。?/td> 84K
代理商: 2SA1015-O
2SA1015
-O
2SA1015
-Y
2SA1015
-GR
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 0.4Watts of Power Dissipation.
Collector-current 0.15A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x
Marking:A1015
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
I
CBO
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0)
I
EBO
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
ON CHARACTERISTICS
h
FE
DC Current Gain
(I
C
=2.0mAdc, V
CE
=6.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
V
BE
Base-Emitter Voltage
(I
E
=310mAdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Transistor Frequency
(I
C
=1.0mAdc, V
CE
=10Vdc, f=30MHz)
Min
Max
Units
50
---
Vdc
50
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
70
400
---
---
0.3
Vdc
---
1.1
Vdc
---
1.45
Vdc
80
MHz
CLASSIFICATION OF H
FE (1)
Rank
Range
O
Y
GR
70-140
120-240
200-400
TO-92
A
E
B
C
D
G
---
Revision: 5 2007/03/01
omp
onents
20736 Marilla
Street Chatsworth
M C C
DIMENSIONS
INCHES
MIN
.170
.170
.550 .590 13.97 14.97
.010
.020
.130
.160
.010
.104
MM
DIM
A
B
C
D
E
G
MAX
.190
.190
MIN
4.33
4.30
MAX
4.83
4.83
NOTE
0.36
3.30
2.44
0.56
3.96
2.64
TM
Micro Commercial Components
E
C
B
www.
mc c semi
.c om
1 of 2
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