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參數(shù)資料
| 型號(hào)： | 2SA1025D |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | 2SA1025D |
2SK3149
Rev.4.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
80
60
40
20
0
50
100
150
200
100
3
10
1
0.1
0.05
1
2
10 20
100
20
16
12
8
4
0
12
34
5
0
24
6
8
10
Ta = 25
°C
Tc = 75
°C
25
°C
–25
°C
Operation in
this area is
limited by RDS(on)
VDS = 10 V
Pulse Test
100
s
1 ms
PW
=10
ms
(1shot)
DC
Opera
tion
(Tc
=
25
°C)
10
s
20
16
12
8
4
3.5 V
3 V
VGS =2.5 V
10 V
Pulse Test
6 V
4 V
0.3
500
30
550
200
0.5
500
1
10
100
2
50
500
20
50
10
20
5
2.5
2.0
1.5
1.0
0.5
0
48
12
16
20
ID = 15 A
5 A
10 A
200
100
VGS = 4 V
10 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1025E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SA1029B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029BTZ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1029C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
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