參數(shù)資料
型號(hào): 2SA1025D
元件分類: 小信號(hào)晶體管
英文描述: SMALL SIGNAL TRANSISTOR, TO-92
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 23K
代理商: 2SA1025D
2SA1025, 2SA1081, 2SA1082
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1025
2SA1081
2SA1082
Unit
Collector to base voltage
V
CBO
–60
–90
–120
V
Collector to emitter voltage
V
CEO
–60
–90
–120
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA1025
2SA1081
2SA1082
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–60
–90
–120 —
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–60
–90
–120 —
V
I
C = –1 mA,
R
BE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
–5
AI
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.1
–0.1
–0.1
AV
CB = –50 V, IE = 0
Emitter cutoff current
I
EBO
–0.1
–0.1
–0.1
V
EB = –2 V, IC = 0
DC current transfer ratio h
FE*
1
250
800
250
800
250
800
V
CE = –12 V,
I
C = –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
–0.2
–0.2
–0.2
V
I
C = –10 mA,
I
B = –1 mA
Base to emitter voltage
V
BE
–0.6
–0.6 —
–0.6 —
V
CE = –12 V,
I
C = –2 mA
Gain bandwidth product f
T
—90
—90
—90
MHz V
CE = –12 V,
I
C = –2 mA
Collector output
capacitance
Cob
3.5
3.5
3.5
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h
FE as follows.
DE
250 to 500
400 to 800
See characteristic curves of 2SA1083.
相關(guān)PDF資料
PDF描述
2SA1025E SMALL SIGNAL TRANSISTOR, TO-92
2SA1025-D SMALL SIGNAL TRANSISTOR, TO-92
2SA1081-E SMALL SIGNAL TRANSISTOR, TO-92
2SA1082D SMALL SIGNAL TRANSISTOR, TO-92
2SA1082-E SMALL SIGNAL TRANSISTOR, TO-92
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