參數(shù)資料
型號(hào): 2SA1037AK
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: General Purpose Transistors(PNP Silicon)
中文描述: 通用晶體管(民進(jìn)黨硅)
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 146K
代理商: 2SA1037AK
M35–1/3
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
–50
V
Collector–Base Voltage
V
CBO
–60
V
Emitter–Base Voltage
V
EBO
–6.0
V
Collector Current — Continuous
I
C
–150
mAdc
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55
~
+150
°C
DEVICE MARKING
2SA1037AK*LT1 =G3F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
μ
A)
Collector–Base Breakdown Voltage
(I
C
= – 50
μ
A)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
V
(BR)CEO
– 50
V
V
(BR)EBO
– 6
V
V
(BR)CBO
– 60
V
I
CBO
– 0.1
μ
A
I
EBO
– 0.1
μ
A
V
CE(sat)
-0.5
V
h
FE
120
––
560
––
f
T
140
––
MHz
C
ob
4.0
5.0
pF
h
FE
values are classified as follows:
Q
120~270
R
S
hFE
180~390
270~560
1
3
2
2SA1037AK*LT1
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
2
EMITTER
3
COLLECTOR
1
BASE
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