參數(shù)資料
型號: 2SA1052C
元件分類: 小信號晶體管
英文描述: 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MPAK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 43K
代理商: 2SA1052C
2SA1052
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–30
V
Collector to emitter voltage
V
CEO
–30
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Emitter current
I
E
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–30
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–30
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.5
AV
CB = –20 V, IE = 0
Emitter cutoff current
I
EBO
–0.5
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
500
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
–0.2
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
–0.75
V
CE = –12 V, IC = –2 mA
Note:
1. The 2SA1052 is grouped by h
FE as follows.
Grade
B
C
D
Mark
MB
MC
MD
h
FE
100 to 200
160 to 320
250 to 500
相關PDF資料
PDF描述
2SA1052C 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1052MBTL 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1052MDUL 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1052MDUR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1052MBTL 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
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