參數(shù)資料
型號(hào)： 2SA1085ETZ-E
元件分類： 小信號(hào)晶體管
英文描述： 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： SC-43A, TO-92(1), 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 189K
代理商： 2SA1085ETZ-E
2SA1084, 2SA1085
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SA1084
2SA1085
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–90
—
–120
—
V
IC = –10
A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–90
—
–120
—
V
IC = –1 mA,
RBE =
∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
–5
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–0.1
—
–0.1
A
VCB = –50 V, IE = 0
Emitter cutoff current
IEBO
—
–0.1
—
–0.1
A
VEB = –2 V, IC = 0
DC current transfer ratio
hFE*
1
250
—
800
250
—
800
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
–0.2
—
–0.2
V
IC = –10 mA,
IB = –1 mA
Base to emitter voltage
VBE
—
–0.6
—
–0.6
—
V
VCE = –12 V,
IC = –2 mA
Gain bandwidth product
fT
—
90
—
90
—
MHz
VCE = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
—
3.5
—
3.5
—
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Noise voltage referred to
input
en
—
0.5
—
0.5
—
nV/
√Hz
VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0,
f = 1Hz
Note:
1. The 2SA1084 and 2SA1085 are grouped by hFE as follows.
D
E
250 to 500
400 to 800
相關(guān)PDF資料
PDF描述
2SA1091-R 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1091 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1121C 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1121D 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1121 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
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2SA1091 制造商:n/a 功能描述:2SA1091 TO92 N9H1D 制造商:ROHM Semiconductor 功能描述:
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2SA1091O 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | TO-92
2SA1091-O(F) 制造商:Toshiba 功能描述:PNP -300V -0.1A 70 to 140 TO92 Bulk
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