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參數(shù)資料
| 型號： | 2SA1096A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planar type(For low-frequency power amplification) |
| 中文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2SA1096A |
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
188
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
I
Features
High collector to emitter voltage V
CEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I
Absolute Maximum Ratings
T
C
=
25
°
C
1 : Emitter
2 : Collector
3 : Base
TO-126B-A1 Package
Unit: mm
I
Electrical Characteristics
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
70
V
Collector to
emitter voltage
2SC2497
V
CEO
50
V
2SC2497A
60
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
I
C
P
C
3
A
Collector current
1.5
1.2
*1
5
*2
A
Collector power dissipation
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
1
μ
A
μ
A
μ
A
100
Emitter cutoff current
I
EBO
V
CBO
V
CEO
V
EB
= 5 V, I
C
= 0
I
C
= 1 mA, I
E
= 0
I
C
= 2 mA, I
B
= 0
10
Collector to base voltage
70
V
Collector to emitter
voltage
2SC2497
50
V
2SC2497A
60
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 1 A
I
C
= 1.5 A, I
B
= 0.15 A
80
220
Collector to emitter saturation voltage
V
CE(sat)
1
V
Base to emitter saturation voltage
V
BE(sat)
f
T
C
ob
I
C
= 1.5 A, I
B
= 0.15 A
V
CB
= 5 V, I
E
=
0.5 A, f = 200 MHz
V
CB
= 20 V, I
E
= 0, f = 1 MHz
1.5
V
Transition frequency
150
MHz
Collector output capacitance
35
pF
Rank
R
S
h
FE
80 to 160
120 to 220
8.0
+0.5
–
0.1
1
±
3
±
3
±
1
±
1
±
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
1
2
3
φ
3.16
±0.1
Note)*1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
Note)*: Rank classification
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1096AQ | 功能描述:TRANS PNP HF 60VCEO 2A TO-126 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1096AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-126 |
| 2SA1096Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-126 |
| 2SA1096R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-126 |
| 2SA-10G-TU | 制造商:Melexis Semiconductors 功能描述: |
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