參數資料
型號: 2SA1121C
元件分類: 小信號晶體管
英文描述: 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MPAK-3
文件頁數: 4/7頁
文件大?。?/td> 38K
代理商: 2SA1121C
2SA1121
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–35
V
Collector to emitter voltage
V
CEO
–35
V
Emitter to base voltage
V
EBO
–4
V
Collector current
I
C
–500
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.5
AV
CB = –20 V, IE = 0
Collector to emitter saturation
voltage
V
CE(sat)
–0.2
–0.6
V
I
C = –150 mA, IB = –15 mA
DC current transfer ratio
h
FE*
1
60
320
V
CE = –3 V, IC = –10 mA
h
FE
10
V
CE = –3 V, IC = –500 mA
(Pulse test)
Base to emitter voltage
V
BE
–0.64
V
CE = –3 V, IC = –10 mA
Note:
1. The 2SA1121 is grouped by h
FE as follows.
Grade
B
C
D
Mark
SB
SC
SD
h
FE
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SA673.
相關PDF資料
PDF描述
2SA1121D 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1121 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1121C 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1121SBUL 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1121SCUR 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SA1121D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1121SB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23
2SA1121SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23
2SA1121-SC(TL-E) 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 35V 0.5A 3-Pin MPAK T/R
2SA1121SCTLE 制造商:Renesas 功能描述:Trans GP BJT PNP 35V 0.5A 3-Pin MPAK T/R