參數(shù)資料
型號: 2SA1121SDTL-E
元件分類: 小信號晶體管
英文描述: 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, SC-59A, MPAK-3
文件頁數(shù): 3/5頁
文件大?。?/td> 65K
代理商: 2SA1121SDTL-E
2SA1121
Rev.2.00 Aug 10, 2005 page 3 of 4
Main Characteristics
0
–20
–40
–60
–80
–100
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (1)
–8
–6
–4
–2
–10
IB = 0
–0.1 mA
–0.2
–0.4
–0.5
–0.6
–0.7
–0.8
–0.9
–1.0
–0.3
0
–100
–200
–300
–400
–500
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (2)
–8
–6
–4
–2
–10
IB = 0
–1 mA
–2
–3
–4
–5
–6
–7
0
–0.3
–1.0
–3
–10
–30
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
–1.0
–0.8
–0.6
–0.2
–0.4
Ta
=
75
°C
VCE = –3 V
25
–25
0
50
100
150
Collector Current IC (mA)
DC
Current
Transfer
ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
–200
–10 –20
–50 –100
–2
–5
–500
VCE = –3 V
75
50
25
0
Ta =
–25
°C
0
40
80
120
160
200
240
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
–200
–100
–10
–20
–50
–5
–500
VCE = –3 V
0
50
100
150
Ambient Temperature Ta (°C)
Collector
power
dissipation
P
c
(mW)
Maximum Collector Dissipation Curve
150
100
50
相關(guān)PDF資料
PDF描述
2SA1121SCTL-E 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1129-M-AZ 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1129-K 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1129-L-AZ 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SA1129-L-AZ 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1121SDTL-H 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1122 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial
2SA1122B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT
2SA1122C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SOT-346
2SA1122CCTL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial