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參數(shù)資料
| 型號： | 2SA1122C |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SA1122C |
2SA1122
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–55
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.5
AV
CB = –30 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.5
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
160
—
800
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.5
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
—
–0.75
V
CE = –12 V, IC = –2 mA
Note:
1. The 2SA1122 is grouped by h
FE as follows.
Grade
B
C
D
Mark
CC
CD
CE
h
FE
160 to 320
250 to 500
400 to 800
See characteristic curves of 2SA836.
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PDF描述 |
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| 2SA1129-L | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1122CCTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1122CD | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1122CDTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1122D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SA1123 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
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