參數(shù)資料
型號(hào)： 2SA1213
廠(chǎng)商： MICRO COMMERCIAL COMPONENTS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SOT-89, SMALL FLAT PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 245K
代理商： 2SA1213
2SA1213
PNP Silicon
Epitaxial Transistors
Features
Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A)
Small flat package
PC=1.0 to 2.0W(mounted on ceramic substrate)
High Speed Switching Time : tstg
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-50
V
VCBO
Collector-Base Voltage
-50
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-2.0
A
IB
Base Current
-0.4
A
PC
Collector power dissipation
0.5
1.0*
W
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
* Mounted on ceramic substrate (250mm
2 x 0.8t)
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
-50
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=50Vdc,IE=0)
---
-0.1
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
---
-0.1
uAdc
ON CHARACTERISTIC
hFE(1)
DC Current Gain
(IC=0.5Adc, VCE=2.0Vdc)
70
---
240
---
hFE(2)
DC Current Gain *
(IC=2.0Adc, VCE=2.0Vdc)
20
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1.0Adc, IB=0.05Adc)
---
-0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=1.0Adc,IB=0.05Adc)
---
-1.2
Vdc
fT
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
100
120
---
MHz
Cob
Collector output capacitance
(VCB=10Vdc, f=1.0MHz)
---
40
---
pF
*hFE(1) classification O:70-140, Y:120-240
Revision: 3
2007/03/01
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omponents
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