參數(shù)資料
型號: 2SA1254
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 38K
代理商: 2SA1254
2
Transistor
2SA1254
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–30
–25
–20
–15
–10
–5
Ta=25C
I
B
=–250
μ
A
–200
μ
A
–150
μ
A
–100
μ
A
–50
μ
A
Collector to emitter voltage V
CE
(V)
C
C
– 0.1
–1
–10
–100
– 0.3
Collector current I
C
(mA)
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=75C
25C
–25C
C
C
0
–1
–10
–100
– 0.3
Collector current I
C
(mA)
–3
–30
–120
–100
–80
–60
–40
–20
V
CE
=–10V
Ta=75C
25C
–25C
F
F
0
Collector to base voltage V
CB
(V)
–1
–10
–100
– 0.3
–3
–30
6
5
4
3
2
1
f=1MHz
I
=0
Ta=25C
C
o
–1
–3
–10
–30
–100
0
5
4
3
2
1
I
=–1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
C
r
0.1
1
10
100
0.3
Emitter current I
E
(mA)
3
30
0
600
500
400
300
200
100
V
=–10V
Ta=25C
T
T
0
–1
–10
–100
– 0.3
Collector current I
C
(mA)
–3
–30
24
20
16
12
8
4
V
=–10V
f=100MHz
Ta=25C
P
0.1
0.3
1
3
10
0
5
4
3
2
1
V
=–10V
f=100MHz
Ta=25C
Emitter current I
E
(mA)
N
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
C
re
— V
CE
f
T
— I
E
P
G
— I
C
NF — I
E
相關(guān)PDF資料
PDF描述
2SA1255 TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)
2SA1261 PNP EPITAXIAL SILICON TRANSISTOR
2SA1263 SILICON PNP TRIPLE DIFFUSED TYPE
2SA1264 SILICON PNP TRIPLE DIFFUSED TYPE
2SA1265 SILICON PNP TRIPLE DIFFUSED TYPE
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參數(shù)描述
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