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參數(shù)資料
| 型號(hào)： | 2SA1296-GR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | 2SA1296-GR |
2SA1296
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1296
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
Complementary to 2SC3266.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
6
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.1 A
120
400
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.1 A
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.1 A
0.85
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
40
pF
Note: hFE (1) Y: 120~240, GR: 200~400
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
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| 2SA1298-O | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1298 | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1298-Y | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1296-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1297-GR(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1297-Y(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-O(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
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