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參數(shù)資料
| 型號(hào)： | 2SA1312-BL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | 2SA1312-BL |
2SA1312
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1312
Audio Frequency Low Noise Amplifier Applications
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
h= 0.95 (typ.)
High hFE: hFE = 200~700
Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
Complementary to 2SC3324
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1312-BL(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1312-BL(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:PNP 120V TRANSISTOR. - Tape and Reel |
| 2SA1312-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1312GRTE85LF | 功能描述:兩極晶體管 - BJT PNP Audio Amp VCEO -120V HFE 700 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1313-O(TE85L,F) | 功能描述:TRANS PNP 50V 500MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):Digi-Key 停止供應(yīng) 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:500mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:250mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:70 @ 100mA，1V 功率 - 最大值:200mW 頻率 - 躍遷:200MHz 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商器件封裝:S-Mini 標(biāo)準(zhǔn)包裝:1 |
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