型號: | 2SA1329 |
廠商: | Toshiba Corporation |
英文描述: | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) |
中文描述: | 硅外延式進(jìn)步黨(厘工序) |
文件頁數(shù): | 2/3頁 |
文件大?。?/td> | 130K |
代理商: | 2SA1329 |
相關(guān)PDF資料 |
PDF描述 |
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2SA1349 | SILICON PNP EPITAXIAL |
2SA1349BL | SILICON PNP EPITAXIAL |
2SA1349GR | SILICON PNP EPITAXIAL |
2SA1349 | TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE, CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE, MAIN AMPL |
2SA1356 | TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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2SA1330 | 制造商:Renesas Electronics Corporation 功能描述: |
2SA1330-L-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
2SA1330-O6(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
2SA1330-O7(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
2SA1330-T1B-A | 制造商:Renesas Electronics Corporation 功能描述: |