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參數(shù)資料
| 型號(hào)： | 2SA1374 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | 2SA1374 |
2SC4264
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
20
V
Collector to emitter voltage
11
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
20
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CE(sat)
—
—
0.5
μ
A
μ
A
μ
A
V
CB
= 15 V, I
E
= 0
V
CE
= 11 V, R
BE
=
∞
V
EB
= 3 V, I
C
= 0
I
C
= 10 mA, I
B
= 5 mA
—
—
10
Emitter cutoff current
—
—
1.0
Collector to emitter saturation
voltage
—
—
0.7
V
DC current transfer ratio
h
FE
Cob
20
—
—
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1MHz
V
CE
= 10 V, I
C
= 10 mA
Collector output capacitance
—
—
1.5
pF
Gain bandwidth product
Note:
Marking is “GC”.
f
T
1.4
—
—
GHz
See characteristic curves of 2SC2734.
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PDF描述 |
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| 2SC4301 | Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓開(kāi)關(guān)晶體管）) |
| 2SC4304 | Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1376A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-200V -.1A .75W |
| 2SA1376A-K(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1376A-L | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1376-L(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1381 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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