O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definiton CRT Display
Video Output Applications
Ordering number:ENN2254
2SA1480/2SC3790
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
Features
High breakdown voltage (VCEO≥300V).
Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8pF (NPN), 2.3pF (PNP).
Adoption of MBIT process.
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
3
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
3
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
0
1
)
–
(A
m
t
n
e
r
u
C
r
o
t
c
e
ll
o
C
k
a
e
PI P
C
0
2
)
–
(A
m
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
5
.
1W
7W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
Tc=25C
C
* : The 2SA1480/2SC3790 are classified by 10mA hFE as follows :
Continued on next page.
k
n
a
RC
D
E
F
h E
F
0
8
o
t
0
40
2
1
o
t
0
60
0
2
o
t
0
10
2
3
o
t
0
6
1
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
2
)
–
(
=
E 0
=1
.
0
)
–
(A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
.
0
)
–
(A
n
i
a
G
t
n
e
r
u
C
Dh E
F
V E
C
I
,
V
0
1
)
–
(
=
C
A
m
0
1
)
–
(
=*
0
4*
0
2
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
0
3
)
–
(
=
C
A
m
0
1
)
–
(
=0
5
1z
H
M
4.0
1.0
8.0
1.6
0.8
0.75
1.5
7.5
3.0
1.4
11.0
15.5
3.3
3.0
0.7
2.4
4.8
1.7
1
23