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參數(shù)資料
| 型號： | 2SA1494 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Epitaxial Planar Transistor(硅PNP外延平面晶體管) |
| 中文描述： | 17 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT-200, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SA1494 |
h
FE
Rank Y(50to100), P(70to140), G(90to180)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3858)
2S A1494
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1494
–200
–200
–6
–17
–5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
4
–10
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
2SA1494
–100
max
–100
max
–200
min
50
min
–2.5
max
20
typ
500
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=–200V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–8A
I
C
=–10A, I
B
=–1A
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
R
L
(
)
I
C
(A)
V
(V)
5
I
B2
(A)
1
t
on
(
μ
s)
0.6typ
t
stg
(
μ
s)
0.9typ
t
f
(
μ
s)
0.2typ
I
(A)
–1
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
Safe Operating Area
(Single Pulse)
h
FE
–I
C
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–17
–1
–2
–3
–4
Collector-Emitter Voltage V
CE
(V)
C
C
(
–15A
–50mA
–100mA
–1A
–600mA
–400mA
–200mA
I
B
=–20mA
0
–3
–2
–1
0
–1
–2
–3
Base Current I
B
(A)
C
C
(
I
C
=–15A
–10A
–5A
–0.02
–0.1
–1
–17
–10
–5
–0.5
50
10
100
300
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
Typ
Collector-Emitter Voltage V
CE
(V)
C
C
(
–2
–10
–100
–300
–0.1
–1
–0.5
–10
–50
–5
3ms
Without Heatsink
Natural Cooling
DC
100ms
20ms
10ms
0.02
0.1
1
10
0
30
10
20
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
f
T
–I
E
Characteristics
(Typical)
200
160
120
80
40
5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
(V
CE
=–4V)
–0.02
–0.1
–0.5
–1
–5
–10 –17
20
50
100
200
Collector Current I
C
(A)
D
F
125C
25C
–30C
I
C
–V
BE
Temperature
Characteristics
(Typical)
0
–17
–15
–10
–5
0
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
1(sTp
2 se)
–CaTp
θ
j-a
–t
Characteristics
1
10
100
1000
2000
Time t(ms)
0.1
1
2
0.5
T
θ
j
(
V
(V)
–10
External Dimensions
MT-200
2
3
1.05
+0.2
-0.1
B
E
5.45
±0.1
5.45
±0.1
2-3.2
±0.1
36.4
±0.3
9
24.4
±0.2
7
2
±
2
4
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
±0.2
2.1
a
b
C
22
Weight : Approx 18.4g
a. Type No.
b. Lot No.
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