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參數(shù)資料
| 型號： | 2SA1499 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 0.6 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220F |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SA1499 |
1
Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
High collector to base voltage V
CBO
G
Full-pack package which can be installed to the heat sink with
one screw.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–400
–400
–7
–1.2
– 0.6
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –400V, I
E
= 0
V
EB
= –7V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –5V, I
C
= –100mA
V
CE
= –5V, I
C
= –300mA
I
C
= –300mA, I
B
= –60mA
I
C
= –300mA, I
B
= –60mA
V
CE
= –10V, I
C
= –100mA, f = 1MHz
I
C
= –300mA,
I
B1
= –60mA, I
B2
= 60mA,
V
CC
= –100V
min
–400
30
10
typ
15
max
–100
–100
160
–1.0
–1.2
1.0
3.5
1.0
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE1
Rank classification
Rank
Q
P
O
h
FE1
30 to 60
50 to 100
80 to 160
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
T
C
=25
°
C
Ta=25
°
C
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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