參數(shù)資料
型號： 2SA1576ART1
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： General Purpose Amplifier Transistors
中文描述： 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 419-04, SC-70, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 42K
代理商： 2SA1576ART1
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 2
Publication Order Number:
2SA1576ART1/D
1
2SA1576ART1
General Purpose
Amplifier Transistors
PNP Surface Mount
Moisture Sensitivity Level: 1
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
(BR)CBO
60
Vdc
CollectorEmitter Voltage
V
(BR)CEO
50
Vdc
EmitterBase Voltage
V
(BR)EBO
7.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Collector Current Peak
I
C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
50
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
CollectorBase Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
I
CBO
0.1
Adc
CollectorEmitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80
°
C)
I
CEO
0.1
2.0
1.0
Adc
Adc
mAdc
DC Current Gain (Note 1)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
h
FE
180
390
CollectorEmitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
0.5
Vdc
1. Pulse Test: Pulse Width
≤
300 s, D.C.
≤
2%.
SC70
CASE 419
MARKING DIAGRAM
2
1
3
76 M
76
M
= Specific Device Code
= Date Code
COLLECTOR
3
1
BASE
2
EMITTER
Device*
Package
Shipping
ORDERING INFORMATION
2SA1576ART1
SC70
3000/Tape & Reel
*The “T1” suffix refers to a 7 inch reel.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1576ART1G 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1576AT106Q 功能描述:兩極晶體管 - BJT PNP 50V 0.15A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1576AT106R 功能描述:兩極晶體管 - BJT PNP 50V 0.15A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1576AT106S 功能描述:兩極晶體管 - BJT PNP 50V 0.15A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1576-SE 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
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