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參數(shù)資料
| 型號： | 2SA1627A |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延硅晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 106K |
| 代理商： | 2SA1627A |
UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R217-004,A
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output Capacitance
Cob
V
CB
= -10V, I
E
=0, f=1.0MHz
42
50
pF
Turn-On Time
ton
0.1
0.5
μs
Storage Time
tstg
3.5
5.0
μs
Fall Time
*
2
: Pulsed PW
≦
350μs,Duty Cycle
≦
2%
CLASSIFICATION OF hFE1
RANK
tf
Ic =-0.5A,R
L
=500
Ω
I
B1
= -I
B2
= -0.1A
Vcc =-250V
0.08
0.5
μs
M
L
K
RANGE
30-60
40-80
60-120
TYPICAL CHARACTERISTICS
-0.005 -0.01 -0.02
-0.05
-3.0
-0.03
Ic -Collector Current (A)
Collector And Base Saturation
Voltage vs.Collector Current
V
C
(
V
B
(
-0.1
-0.2
-0.5
-0.1
-0.3
-1.0
Ic =5I
B
V
BE
(sat)
Vc
E
(sat)
0
-2.0
-4.0
-6.0
-8.0
0
V
CE
-Collector to Emitter Voltage (V)
Collector Current vs.
Collector to Emitter Voltage
I
-20
-10
-40
-60
-80
-100
I
B
=0.2mA
I
B
=0.4mA
I
B
=0.6mA
I
B
=0.8mA
I
B
=1.0mA
I
B
=1.2mA
I
B
=1.4mA
I
B
=1.6mA
I
B
=1.8mA
I
B
=.mA
V
CE
= -5.0V
Collector Current vs.
Base to Emitter Voltage
-0.003
I
-0.01
-0.03
-0.1
-0.3
-1.0
0 -0.2 -0.4 -0.6 -0.8
V
BE
-Base to Emitter Voltage (V)
-1.0 -1.2 -1.4 -1.6
300
100
-0.002 -0.005
-0.02
DC Durrent Gain vs. Collector Current
1
h
30
10
3
Ic -Collector Current
(
A
)
-0.01
-0.05-0.1 -0.2
-0.5 -1.0
-
2.0
1000
V
CE
= -5.0V
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