參數(shù)資料
型號: 2SA1652L
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | TO-220VAR
中文描述: 晶體管|晶體管|進(jìn)步黨| 100V的五(巴西)總裁| 10A條一(c)|至220VAR
文件頁數(shù): 1/6頁
文件大?。?/td> 161K
代理商: 2SA1652L
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1652 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
V
CE(sat)
0.3 V (MAX.) @I
C
=
6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
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ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current
I
C(DC)
10
A
Collector current
I
C(pulse)
PW
300
μ
s, duty cycle
10%
20
A
Base current
I
B(DC)
6.0
A
Total power dissipation
P
T
Tc = 25
°
C
25
W
Total power dissipation
P
T
Ta = 25
°
C
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
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