參數(shù)資料
型號: 2SA1742-M
元件分類: 功率晶體管
英文描述: 7 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: ISOLATED TO-220, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 243K
代理商: 2SA1742-M
Data Sheet D14858EJ2V0DS
2
2SA1742
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VCEO(SUS)
IC =
4.0 V, IB = 0.4 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC =
4.0 A, IB1 = IB2 = 0.4 A,
VBE(OFF) = 1.5 V, L = 180
H, clamped
60
V
ICBO
VCB =
60 V, IE = 0 A
10
A
ICER
VCE =
60 V, RBE = 50 , TA = 125°C
1.0
mA
ICEX1
VCE =
60 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
60 V, VBE(OFF) = 1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0 A
10
A
hFE1
VCE =
2.0 V, IC = 0.7 ANote
100
hFE2
VCE =
2.0 V, IC = 1.5 ANote
100
400
DC current gain
hFE3
VCE =
2.0 V, IC = 4.0 ANote
60
VCE(sat)1
IC =
4.0 A, IB = 0.2 ANote
0.3
V
Collector saturation voltage
VCE(sat)2
IC =
6.0 A, IB = 0.3 ANote
0.5
V
VBE(sat)1
IC =
4.0 A, IB = 0.2 ANote
1.2
V
Base saturation voltage
VBE(sat)2
IC =
6.0 A, IB = 0.3 ANote
1.5
V
Collector capacitance
Cob
VCB =
10 V, IE = 0 A, f = 1.0 MHz
180
pF
Gain bandwidth product
fT
VCB =
10 V, IC = 1.0 A
40
MHz
Turn-on time
ton
0.3
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
4.0 A, RL = 12.5 ,
IB1 =
IB2 = 0.2 A, VCC 50 V
Refer to the test circuit.
0.3
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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