參數資料
型號: 2SA1767
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type
中文描述: 70 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92-B1, 3 PIN
文件頁數: 1/2頁
文件大?。?/td> 36K
代理商: 2SA1767
1
Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473A
I
Features
G
High collector to emitter voltage V
CEO
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–300
–300
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100
μ
A, I
B
= 0
I
E
= –1
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–300
–5
60
typ
50
7
max
150
– 0.6
Unit
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
h
FE
60 ~ 150
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
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相關代理商/技術參數
參數描述
2SA17670QA 功能描述:TRANS PNP 300VCEO 70MA TO-92 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA1767Q 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1767-Q 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SA1767QTA 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SA1768S-AN 功能描述:兩極晶體管 - BJT BIP PNP 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2