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參數(shù)資料
| 型號： | 2SA1816 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | NS-B1, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2SA1816 |
1
Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
I
Features
G
High collector to emitter voltage V
CEO
.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–150
–5
–100
–50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= – 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
–150
–5
90
typ
200
150
max
–1
450
–1
5
Unit
μ
A
V
V
V
MHz
pF
mV
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
*1
h
FE
Rank classification
Rank
Q
R
S
T
h
FE
90 ~ 155
130 ~ 220
185 ~ 330
260 ~ 450
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