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參數(shù)資料
| 型號： | 2SA1836-M7 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 37K |
| 代理商： | 2SA1836-M7 |
2001
PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
D15615EJ1V0DS00 (1st edition)
Date Published
July 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
High DC current gain: hFE2 = 200 TYP.
High voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
100
mA
Collector Current (pulse)
Note1
IC(pulse)
200
mA
Total Power Dissipation (TA = 25°C)
Note2
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
–55 to + 150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB =
60 V, IE = 0
100
nA
Emitter Cut-off Current
IEBO
VEB =
5.0 V, IC = 0
100
nA
DC Current Gain
Note
hFE1
VCE =
6.0 V, IC = 0.1 mA
50
hFE2
VCE =
6.0 V, IC = 1.0 mA
90
200
600
Base to Emitter Voltage
Note
VBE
VCE =
6.0 V, IC = 1.0 mA
0.62
V
Collector Saturation Voltage
Note
VCE(sat)
IC =
100 mA, IB = 10 mA
0.18
0.3
V
Base Saturation Voltage
Note
VBE(sat)
IC =
100 mA, IB = 10 mA
0.86
1.0
V
Gain Bandwidth Product
fT
VCE =
6.0 V, IE = 10 mA
50
180
MHz
Output Capacitance
Cob
VCE =
6.0 V, IE = 0, f = 1.0 MHz
4.5
6.0
pF
Note Pulsed: PW
≤ 350
s, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking
M4
M5M6M7
hFE2
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6
±
0.1
0.8
±
0.1
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1836-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Transistor,50V,0.1A,USM3 制造商:Renesas 功能描述:Trans GP BJT PNP 50V 0.1A 3-Pin SC-75 T/R |
| 2SA1837 | 功能描述:TRANS PNP -230V -1A TO220NIS RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1837(F | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 230V 1A 3-Pin(3+Tab) TO-220NIS |
| 2SA1837(F) | 制造商:Toshiba 功能描述:PNP -230V -1A 100 to 320 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 230V 1A 3-Pin(3+Tab) TO-220NIS |
| 2SA1837(F,M) | 功能描述:兩極晶體管 - BJT PNP - 230V -1A 20W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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