參數(shù)資料
型號(hào): 2SA1836
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: USM, SC-75, 3 PIN
文件頁數(shù): 3/7頁
文件大小: 251K
代理商: 2SA1836
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PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. D15615EJ2V0DS00 (2nd edition)
Date Published October 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
High DC current gain: hFE2 = 200 TYP.
High voltage: VCEO = 50 V
Can be automatically mounted
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SA1836
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
100
mA
Collector Current (pulse)
Note1
IC(pulse)
200
mA
Total Power Dissipation
Note2
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
–55 to + 150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
PACKAGE DRAWING (Unit: mm)
0.3
1.6
±
0.1
0.8
±
0.1
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0.05
+0.1
–0
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