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參數(shù)資料
| 型號(hào)： | 2SA1845 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進(jìn)步黨硅外延的高晶體管高速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2SA1845 |
Data Sheet D15592EJ2V0DS
2
2SA1845
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
10
μ
A
Collector cutoff current
I
CER
V
CE
=
100 V, R
EB
= 50
Ta = 125
°
C
1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
100 V, V
BE(off)
= 1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
=
100 V, V
BE(off)
= 1.5 V
Ta = 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
5.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
*
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE2
*
V
CE
=
2.0 V, I
C
=
1.0 A
100
400
DC current gain
h
FE3
*
V
CE
=
2.0 V, I
C
=
3.0 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
=
3.0 A, I
B
=
0.15 A
0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
4.0 A, I
B
=
0.2 A
0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
3.0 A, I
B
=
0.15 A
1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
4.0 A, I
B
=
0.2 A
1.5
V
Gain bandwidth product
f
T
V
CE
=
10 V, I
C
=
0.5 A
150
MHz
Collector capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
130
pF
Turn-on time
t
on
0.3
μ
s
Storage time
t
stg
1.4
μ
s
Fall time
t
f
I
C
=
3.0 A
I
B1
=
I
B2
=
0.15 A
R
L
= 16.7
, V
CC
=
50 V
0.4
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE
100 to 200
150 to 300
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
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