參數(shù)資料
型號: 2SA1871-GA1-AZ
元件分類: 功率晶體管
英文描述: 1 A, 600 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù): 3/6頁
文件大小: 116K
代理商: 2SA1871-GA1-AZ
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SILICON POWER TRANSISTOR
2SC4346,4346-Z
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
DATA SHEET
Document No. D17082EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
2004
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4346
TO-251 (MP-3)
2SC4346-Z
TO-252 (MP-3Z)
DESCRIPTION
The 2SC4346 is a mold power transistor developed for
high-speed switching, high voltage switching, and is ideal
for use as a driver in devices such as switching regulators,
DC/DC converters, and high-frequency power amplifiers.
FEATURES
Small package, but can control for high-current
Low collector saturation voltage
VCE(sat) = 1.0 V MAX. (IC = 2.0 A)
Ultra high-speed switching
tf = 0.3
μs MAX. (IC = 2.0 A)
Base reverse bias safe operating area is wide
VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
8.0
V
Collector Current (DC)
IC(DC)
5.0
A
Collector Current (pulse)
IC(pulse)
Note1
10
A
Base Current (DC)
IB(DC)
2.5
A
Total Power Dissipation
PT1 (TC = 25°C)
18
W
Total Power Dissipation
PT2 (TA = 25°C)
1.0
Note2, 2.0 Note3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on print board
3. Mounted on ceramic substrate of 7.5 cm
2 x 0.7 mm
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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