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參數(shù)資料
| 型號： | 2SA1871GA2 |
| 廠商： | NEC Corp. |
| 英文描述： | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 中文描述： | 5個引腳µ帶看門狗和手動復(fù)位的P監(jiān)控電路 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 116K |
| 代理商： | 2SA1871GA2 |
2002
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
New package with dimensions in between those of small signal
and power signal package
High voltage
Fast switching speed
Complementary transistor with 2SC4942
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
600
V
Collector to emitter voltage
V
CEO
600
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
1.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms, duty cycle
≤
50 %
2.0
A
Total power dissipation
P
T
7.5 cm
2
×
0.7 mm ceramic board used
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Electrode connection
1: Emitter
2: Collector
3: Base
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1871GA3 | TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-243VAR |
| 2SA1939 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
| 2SA1939 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SA1945 | FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA1963 | High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1871-GA2(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1871-GA3(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1871-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SA1873-GR | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F | 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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