參數(shù)資料
型號(hào)： 2SA1939-O
元件分類： 功率晶體管
英文描述： 6 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝： LEAD FREE, 2-16C1A, 3 PIN
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 121K
代理商： 2SA1939-O
2SA673A(K)
Rev.3.00 Aug 10, 2005 page 4 of 5
–0.1
–1.0 –2
–5 –10 –20 –50 –100 –200 –500
–0.2 –0.5
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–0.7
Collector Current IC (mA)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Base
to
Emitter
Saturation
Voltage
V
BE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
–0.1
–1.0 –2
–5 –10 –20 –50 –100 –200 –500
–0.2 –0.5
–0.5
–0.4
–0.6
–0.7
–0.8
–0.9
–1.0
–1.1
Collector Current IC (mA)
Base
to
Emitter
Saturation
Voltage
V
BE(sat)
(V)
Base to Emitter Saturation Voltage vs.
Collector Current
IC = 10 IB
–25
0
25
50
Ta =
75°
C
–5
–20
–50 –100 –200
–500
–10
10
20
50
100
200
500
1,000
Collector Current IC (mA)
Swiching
Time
t
(ns)
Switcing Time vs. Collector Current
VCC = –10.3 V
IC = 10 IB1 = –10 IB2
toff
tstg
ton
td
–0.1
–1.0 –2
–5 –10 –20 –50 –100 –200 –500
–0.2 –0.5
–0.5
–0.4
–0.6
–0.7
–0.8
–0.9
–1.0
–1.1
Base to Emitter Saturation Voltage vs.
Collector Current
IC = 10 IB
–25
0
25
50
Ta =
75°
C
Switching Time Test Circuit
ton, toff Test Circuit
50
0.002
6 V
6 k
1 k
–10.3 V
6 k
D.U.T.
CRT
P.G.
tr, tf
≤ 15 ns
PW 5
s
duty ratio
≤ 10%
+–
50
0.002
+ –
Unit R : Q
C :
F
Switching Time Test Circuit
tstg Test Circuit
200
50
0.002
–7 V
100
240
–5 V
1.0 215
D.U.T.
CRT
P.G.
tr
≤ 5 ns
PW 5
s
duty ratio
≤ 2%
–+
50
0.002
+ –
Unit R : Q
C :
F
0
–13 V
10%
Response Waveform
90%
10%
Input
Output
ton
toff
0
9 V
10%
Input
Output
tstg
Response Waveform
Collector Current IC (mA)
相關(guān)PDF資料
PDF描述
2SA1939 6 A, 80 V, PNP, Si, POWER TRANSISTOR
2SA1940-R 8 A, 120 V, PNP, Si, POWER TRANSISTOR
2SA1940-O 8 A, 120 V, PNP, Si, POWER TRANSISTOR
2SA1943 15 A, 230 V, PNP, Si, POWER TRANSISTOR
2SA1946-13-1E 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1939-O(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-3PN
2SA1940-O(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3P(N)
2SA1940-R(Q) 制造商:Toshiba 功能描述:PNP Bulk
2SA1941-O(Q) 制造商:Toshiba 功能描述:PNP -140V -10A 80 to 160 TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 140V 10A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:Tr.,PNP,140V/10A,hfe=80to160,TO-3P(N) 制造商:Toshiba 功能描述:Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PN
2SA1941-O(Q,T) 功能描述:兩極晶體管 - BJT PNP VCEO -140V 70-W DC -10A 100W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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