參數(shù)資料
型號(hào)： 2SA1939
元件分類： 功率晶體管
英文描述： 6 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝： LEAD FREE, 2-16C1A, 3 PIN
文件頁數(shù)： 3/4頁
文件大小： 121K
代理商： 2SA1939
2SA673A(K)
Rev.3.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
–20
–40
–60
–80
–100
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (1)
–8
–6
–4
–2
–10
IB = 0
–0.1 mA
–0.2
–0.4
–0.5
P
C =
400
mW
–0.6
–0.7
–0.8
–0.9
–1.0
–0.3
0
–100
–200
–300
–400
–500
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (2)
–8
–6
–4
–2
–10
IB = 0
–1 mA
–2
–3
–4
–5
–6
–7
PC = 400 mW
0
–0.3
–1.0
–3
–10
–30
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
–1.0
–0.8
–0.6
–0.2
–0.4
Ta
=
75
°C
VCE = –3 V
2
5
–25
0
50
100
150
Collector Current IC (mA)
DC
Current
Transfer
ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
–200
–10 –20
–50 –100
–2
–5
–500
VCE = –3 V
75
50
25
0
Ta =
–25
°C
0
40
80
120
160
200
240
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
–200
–100
–10
–20
–50
–5
–500
VCE = –3 V
0
200
400
600
50
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
P
C
(mW)
Maximum Collector Dissipation Curve
100
150
相關(guān)PDF資料
PDF描述
2SA1940-R 8 A, 120 V, PNP, Si, POWER TRANSISTOR
2SA1940-O 8 A, 120 V, PNP, Si, POWER TRANSISTOR
2SA1943 15 A, 230 V, PNP, Si, POWER TRANSISTOR
2SA1946-13-1E 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1946-T13-1F 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1939-O(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-3PN
2SA1940-O(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3P(N)
2SA1940-R(Q) 制造商:Toshiba 功能描述:PNP Bulk
2SA1941-O(Q) 制造商:Toshiba 功能描述:PNP -140V -10A 80 to 160 TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 140V 10A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:Tr.,PNP,140V/10A,hfe=80to160,TO-3P(N) 制造商:Toshiba 功能描述:Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PN
2SA1941-O(Q,T) 功能描述:兩極晶體管 - BJT PNP VCEO -140V 70-W DC -10A 100W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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