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參數(shù)資料
| 型號(hào)： | 2SA1955CT |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CST3, 2-1J1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | 2SA1955CT |
2SA1955CT
2009-04-13
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955CT
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC(Note1)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (10 mm
× 10 mm × 1 mmt)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
３
１２
0.
25
±
0
.0
3
1.
0
±
0
.05
0.
65
±
0
.0
2
0.35±0.02
0.15±0.03
0.
2
5±
0
.0
3
0.5±0.03
0.6±0.05
0.
3
8
+0
.02
-0
.03
0.05±0.03
0.
0
5±
0
.0
3
CST3
1.BASE
2.EMITTER
3.COLLECTOR
Type Name
8J
1
3
2
hFE Rank
相關(guān)PDF資料 |
PDF描述 |
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| 2SA1955F-A | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1955FV-A | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1955FV | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1955FV-A | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1955FV | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1955FVATPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT PNP Trans -0.4A LN -12V VCEO |
| 2SA1955FVBTPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM |
| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA19620TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 2SA1962-O | 功能描述:兩極晶體管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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