- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33324 > 2SA1963-3 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA1963-3 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CP, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | 2SA1963-3 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise Amplifier,
Ultrahigh-Speed Switching Applications
Ordering number:ENN5230
2SA1963
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/83095 (KOTO) TA-0541 No.5230–1/5
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
Package Dimensions
unit:mm
2018B
[2SA1963]
Features
Low noise : NF=1.5dB typ (f=1GHz).
High gain : | S2le |
2=9dB typ (f=1GHz).
High cutoff frequency : fT=5GHz typ.
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
2
1
–
V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
8
–
V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
2
–
V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
0
5
–
A
m
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
2W
m
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
Specifications
Absolute Maximum Ratings at Ta = 25C
C
Electrical Characteristics at Ta = 25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
1
–
=
E 0
=0
.
1
–
A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
1
–
=
C 0
=0
.
1
–
A
n
i
a
G
t
n
e
r
u
C
Dh E
F
V E
C
I
,
V
5
–
=
C
A
m
0
1
–
=*
0
2*
0
2
1
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
–
=
C
A
m
0
1
–
=
35
z
H
G
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
–
=8
.
03
.
1F
p
e
c
n
a
t
i
c
a
p
a
C
r
e
f
s
n
a
r
T
e
s
r
e
v
e
RC e
r
V B
C
z
H
M
1
=
f
,
V
0
1
–
=5
5
.
0F
p
n
i
a
G
r
e
f
s
n
a
r
T
d
r
a
w
r
o
F
V E
C
I
,
V
5
–
=
C
z
H
G
1
=
f
,
A
m
0
1
–
=7
9
B
d
V E
C
I
,
V
2
–
=
C
z
H
G
1
=
f
,
A
m
3
–
=5
.
6B
d
e
r
u
g
i
F
e
s
i
o
NF
NV E
C
I
,
V
5
–
=
C
z
H
G
1
=
f
,
A
m
5
–
=5
.
10
.
3B
d
* : The 2SA1963 is classified by 10mA hFE as follows :
Marking : MS
hFE ranks : 1, 2, 3
k
n
a
R
123
h E
F
0
5
o
t
0
20
8
o
t
0
40
2
1
o
t
0
6
| S2le |
2(1)
| S2le |
2(2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1965 | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1980-G-AP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1980-Y-BP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1980-Y-AP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1980-O-AP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1964E | 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 160V 1.5A TO-220FP |
| 2SA1971(TE12L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 400V 0.5A 35MHz PW-Mini |
| 2SA1972(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1972(TE6,F,M) | 功能描述:兩極晶體管 - BJT Transistor PNP, 400V, 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1972,F(J | 功能描述:TRANS PNP 500MA 400V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產(chǎn) 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:500mA 電壓 - 集射極擊穿（最大值）:400V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1V @ 10mA，100mA 電流 - 集電極截止（最大值）:10μA（ICBO） 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:140 @ 20mA，5V 功率 - 最大值:900mW 頻率 - 躍遷:35MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長(zhǎng)體 供應(yīng)商器件封裝:TO-92MOD 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。