參數(shù)資料
型號: 2SA1986
元件分類: 功率晶體管
英文描述: 15 A, 230 V, PNP, Si, POWER TRANSISTOR
封裝: 2-16C1A, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 128K
代理商: 2SA1986
2SA1986
2004-07-07
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1986
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SC5358
Recommended for 80-W high-fidelity audio frequency amplifier
output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
230
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
160
DC current gain
hFE (2)
VCE = 5 V, IC = 7 A
35
70
Collector-emitter saturation voltage
VCE (sat)
IC = 8 A, IB = 0.8 A
1.5
3.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 7 A
1.0
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
30
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
360
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
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參數(shù)描述
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2SA1986-R(Q) 制造商:Toshiba America Electronic Components 功能描述:
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2SA1KBOX 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days