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參數(shù)資料
| 型號： | 2SA2018TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | EMT3, SC-75A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 139K |
| 代理商： | 2SA2018TL |
2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.C
1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching, for muting.
Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ 250mA
At IC =
200mA / IB = 10mA
Dimensions
(Unit : mm)
Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
PC
Tstg
Limits
15
12
150
55 to +150
Unit
V
mW
°C
Collector-base voltage
Collector-emitter voltage
VEBO
6V
Emitter-base voltage
Collector power dissipation
Storage temperature
IC
ICP
500
1
mA
A
Collector current
Tj
150
Junction temperature
SMT3
200
VMT3
EMT3
Single pulse, Pw=1ms
Electrical characteristics
(Ta=25
°C)
Parameter
Collector-base breakdown voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
BVCBO
15
VIC
= 10A
IC
= 1mA
IE
= 10A
VCB
= 15V
IC
= 200mA / IB= 10mA
VCE
= 2V / IC= 10mA
VCE
= 2V, IE=10mA, fT=100MHz
VCB
= 10V, IE=0A, f=1MHz
Collector-emitter breakdown voltage
BVCEO
12
V
Emitter-base breakdown voltage
BVEBO
6
V
Collector cutoff current
ICBO
100 nA
VEB
= 6V
Emitter cutoff current
IEBO
100 nA
Collector-emitter saturation voltage
VCE (sat)
100 250 mV
DC current transfer ratio
hFE
270
680
Transition frequency
fT
260
MHz
Output capacitance
Cob
6.5
pF
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Each lead has same dimensions
Abbreviated symbol : BW
2SA2018
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol : BW
2SA2119K
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol : BW
2SA2030
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
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