- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371480 > 2SA2057 (PANASONIC CORP) Silicon PNP epitaxial planar type PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA2057 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 80K |
| 代理商： | 2SA2057 |
Power Transistors
2SA2057
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJD00284BED
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■
Features
High speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■
Absolute Maximum Ratings
T
C
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
60
6
3
6
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
*
I
CP
A
Collector power dissipation
P
C
20
W
T
a
=
25
°
C
2.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
CBO
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
60
V
Collector-base cutoff current (Emitter open)
100
100
1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Emitter-base cutoff current (Collector open)
I
EBO
h
FE1 *
mA
Forward current transfer ratio
120
320
h
FE2
40
Collector-emitter saturation voltage
V
CE(sat)
f
T
0.5
V
Transition frequency
90
MHz
Turn-on time
t
on
0.15
0.30
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
0.4
0.7
Fall time
0.10
0.15
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
Rank
Q
P
h
FE1
120 to 250
160 to 320
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
Internal Connection
B
C
E
Note)*: Non-repetitive peak collector current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2058 | - |
| 2SA2059 | SILICON PNP EPITAXIAL TYPE |
| 2SA205 | General Purpose Amplifier |
| 2SA205H | General Purpose Amplifier |
| 2SA205S | General Purpose Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA20570P | 功能描述:TRANS PNP PWR AMP 60V 3A TO-220D RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱(chēng):MMBT489LT1GOSDKR |
| 2SA2058 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type |
| 2SA2058(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA2058_06 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SA2059 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。