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參數(shù)資料
| 型號(hào)： | 2SA2058 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-3S1A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 2SA2058 |
2SA2058
2004-07-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.2 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V
DC
IC
1.5
Collector current
Pulse
ICP
2.5
A
Base current
IB
150
mA
DC
500
Collector power
dissipation
t
= 10 s
PC
(Note)
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2)
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
V
hFE (1)
VCE = 2 V, IC = 0.2 A
200
500
DC current gain
hFE (2)
VCE = 2 V, IC = 0.6 A
125
Collector-emitter saturation voltage
VCE (sat)
IC = 0.6 A, IB = 20 mA
0.19
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.6 A, IB = 20 mA
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
12
pF
Rise time
tr
50
Storage time
tstg
115
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC 6 V, RL = 10
IB1 = IB2 = 20 mA
25
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
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| 2SA2059(TE12L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 20V 3A hfe200-500 40ns PW |
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