參數(shù)資料
型號(hào): 2SA2060
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: SC-62, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 148K
代理商: 2SA2060
2SA2060
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2060
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)
High-speed switching: tf = 90 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
2.0
Collector current
Pulse
ICP
3.5
A
Base current
IB
200
mA
t = 10 s
2.5
Collector power
dissipation
DC
PC
(Note 1)
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.3 A
200
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.0 A
100
Collector-emitter saturation voltage
VCE (sat)
IC = 1.0 A, IB = 0.033 A
0.2
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.0 A, IB = 0.033 A
1.1
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
Rise time
tr
60
Storage time
tstg
250
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ≈ 30 V, RL = 30
IB1 = IB2 = 33 mA
90
ns
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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