- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33325 > 2SA2089STPQ 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA2089STPQ |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPT, SC-72, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | 2SA2089STPQ |
2SA2089S
Transistors
2/3
!
Electrical characteristics (Ta=25
°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE (sat)
hFE
fT
Cob
Ton
Tstg
Tf
IC
= 1mA
IC
= 100A
IE
= 100A
VCB
= 40V
VEB
= 4V
IC
= 100mA
IB
= 10mA
VCE
= 2V
IC
= 50mA
VCE
= 10V
IE
=100mA
f
=10MHz
VCB
= 10V
IE
=0mA
f
=1MHz
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
1
2
60
6
120
150
400
10
35
100
60
1.0
300
270
V
A
mV
MHz
pF
ns
IC
= 500mA
IB1
= 50mA
IB2
=50mA
VCC
25V
!
hFE RANK
Q
120
270
!
Electrical characteristic curves
0.1
1
100
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0.001
0.01
1
0.1
10
COLLECTOR
CURRENT
:
I
C
(A)
Fig.1 Safe Operating Area
Single
non repetitive
Pulsed
100ms
10ms
1ms
500
s
DC
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (A)
SWITCHING
TIME
:
(ns)
Fig.2 Switching Time
Ta
=25°C
VCC
= 25V
IC / IB
=10 / 1
Tstg
Tf
Ton
0.001
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.3 DC Current Gain vs.
Collector Current (
Ι)
VCE
= 2V
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.4 DC Current Gain vs.
Collector Current (
ΙΙ)
Ta
=25°C
VCE
= 5V
VCE
= 3V
VCE
= 2V
0.001
0.01
0.1
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
IC / IB
=10 / 1
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (
Ι)
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
Ta
=25°C
IC / IB
=100/1
IC / IB
=20/1
IC / IB
=10/1
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (
ΙΙ)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2093TV2Q | 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2093TV2 | 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2093TV2R | 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2118P | 2 A, 180 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA2120-R | 12 A, 200 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA209 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -20V -.4A .12W |
| 2SA2090 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor (-60V, -0.5A) |
| 2SA2090_11 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor (-60V, -0.5A) |
| 2SA2090TLQ | 功能描述:兩極晶體管 - BJT TRNSISTR 60V.5A PNP HI VOLT DSCHRG RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2090TLR | 功能描述:TRANSISTOR PNP 60V .5A TSMD3 TR RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。