- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371481 > 2SA2101 (PANASONIC CORP) Silicon PNP epitaxial planar type PDF資料下載
參數(shù)資料
| 型號： | 2SA2101 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220D-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SA2101 |
Power Transistors
2SA2101
Silicon PNP epitaxial planar type
1
Publication date: November 2002
SJD00295AED
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■
Features
High-speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
S
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
CBO
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
CE
=
4 V, I
C
=
0.2 A
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
2 A
I
C
=
2 A, I
B
=
0.25 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
10 MHz
I
C
=
1 A, Resistance loaded
I
B1
=
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
60
V
Collector-base cutoff current (Emitter open)
100
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Forward current transfer ratio
h
FE1
h
FE2
60
80
250
h
FE3
30
Collector-emitter saturation voltage
V
CE(sat)
f
T
0.6
V
Transition frequency
100
MHz
Turn-on time
t
on
0.15
μ
s
μ
s
μ
s
Storage time
t
stg
t
f
0.35
Fall time
0.06
Internal Connection
B
C
E
Marking Symbol: A2101
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
60
6
2
4
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
A
Peak collector current
I
CP
P
C
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
15
W
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2102 | Silicon PNP epitaxial planar type |
| 2SA2112 | High Current Switching Applications |
| 2SA2120 | Power Amplifier Applications |
| 2SA2121 | Power Amplifier Applications |
| 2SA2140 | Silicon PNP epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2102 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| 2SA211 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -18V -.1A .12W |
| 2SA2112 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2112_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High Current Switching Applications |
| 2SA2112-AN | 功能描述:兩極晶體管 - BJT DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。