參數(shù)資料
型號: 2SA2164
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planar type For high-frequency amplification
中文描述: 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SSSMINI3-F2, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 463K
代理商: 2SA2164
Transistors
Publication date : December
2004
SJC
00330
AED
1
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transfer ratio f
T
SSS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
55
to +
125
°
C
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
V
CE
= –
10
V, I
C
= –
1
mA
0
.
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –
10
V, I
E
=
0
0
.
1
μ
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= –
20
V, I
B
=
0
100
μ
A
Emitter-base cut-off current (Collector open)
I
EBO
V
EB
= –
5
V, I
C
=
0
10
μ
A
Forward current transfer ratio
h
FE
V
CB
= –
10
V, I
E
=
1
mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= –
10
mA, I
B
= –
1
mA
0
.
1
V
Transition frequency
f
T
V
CB
= –
10
V, I
E
=
1
mA, f =
200
MHz
150
300
MHz
Noise figure
NF
V
CB
= –
10
V, I
E
=
1
mA, f =
5
MHz
2
.
8
dB
Reverse transfer impedance
Z
rb
V
CB
= –
10
V, I
E
=
1
mA, f =
2
MHz
22
Common-emitter reverse transfer capacitance
C
re
V
CB
= –
10
V, I
E
=
1
mA, f =
10
.
7
MHz
1
.
2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
1
±
0
0
±
0
0
0
5
0
0
±
0
0
0.33
(0.40)
(0.40)
0.80
±
0.05
1.20
±
0.05
1
2
3
+0.05
0.10
+0.05
0.23
+0.05
Marking Symbol : E
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