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參數(shù)資料
| 型號(hào)： | 2SA673A(K) |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 36K |
| 代理商： | 2SA673A(K) |
2SA673A(K)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–50
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
V
BE
V
CE(sat)
—
—
–0.5
μ
A
μ
A
V
CB
= –20 V, I
E
= 0
V
EB
= –3 V, I
C
= 0
V
EB
= –3 V, I
C
= –10 mA
I
C
= –150 mA, I
B
= –15 mA*
2
Emitter cutoff current
—
—
–0.5
Base to emitter voltage
—
–0.64
—
V
Collector to emitter saturation
voltage
—
–0.2
–0.6
V
Base to emitter saturation
voltage
V
BE(sat)
—
–0.87
—
V
I
C
= –150 mA, I
B
= –15 mA*
2
DC current transfer ratio
h
FE
*
1
h
FE
f
T
t
on
t
off
t
stg
60
—
320
V
CE
= –3 V, I
C
= –10 mA
V
CE
= –3 V, I
C
= –500 mA*
2
V
CE
= –3 V, I
C
= –10 mA
V
CC
= –10.3 V
I
C
= 10 I
B1
= –10 I
B2
= –10 mA
V
CC
= –5 V,
I
C
= I
B1
= I
B2
= –20 mA
10
—
—
Gain bandwidth product
—
120
—
MHz
Turn on time
—
0.3
—
μ
s
μ
s
μ
s
Turn off time
—
0.6
—
Storage time
—
0.4
—
Notes: 1. The 2SA673A(K) is grouped by h
FE
as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
See 2SA673A except for the above – mentioned characteristic curves.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA673AKBTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA673AKCTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA673AKDTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA673B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SA673BTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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